Verfahren zum Aufzeigen von kristallbezogenen Defekten
摘要
<p>Process for detecting grown-in-defects in a semiconductor silicon substrate. The process includes contacting a surface of the semiconductor silicon substrate with a gaseous acid in a reducing atmosphere at a temperature and duration sufficient to grow grown-in -defects disposed in the semiconductor silicon substrate to a size capable of being detected by an optical detection device.</p>