Semiconductor device, method for manufacturing same, and display device

摘要

Disclosed is a semiconductor device in which a thin film transistor and a thin film diode are provided on one same substrate, and the characteristics respectively required for the thin film transistor and the thin film diode are achieved. Specifically disclosed is a semiconductor device that includes an insulating layer (104) formed on the surface of a substrate (101), and a thin film transistor and a thin film diode that are formed on the insulating layer (104). A portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (109) for the thin film diode, is provided with a first recessed and projected pattern (105). Meanwhile, a portion of the surface of the insulating layer (104), which is positioned below a semiconductor layer (108) for the thin film transistor, is not provided with the first recessed and projected pattern (105). The surface of the semiconductor layer (109) for the thin film diode has a second recessed and projected pattern that reflects the shape of the first recessed and projected pattern (105).

主权项

1. A semiconductor device, comprising:
a substrate; an insulating layer formed on a surface of the substrate; a thin film transistor that is formed on said insulating layer, and that has a semiconductor layer including a channel region, a source region and a drain region, a gate electrode, and a gate insulating film provided between said semiconductor layer and said gate electrode; and a thin film diode that is formed on said insulating layer, and that has a semiconductor layer including at least an n-type region and a p-type region, wherein a first recessed and projected pattern is formed on a surface of said insulating layer in a portion located below the semiconductor layer of said thin film diode, and said first recessed and projected pattern is absent in a portion located below the semiconductor layer of said thin film transistor, and wherein a surface of the semiconductor layer of said thin film diode includes a second recessed and projected pattern reflecting a shape of said first recessed and projected pattern.