METHOD OF FABRICATING THE AN ULTRA THIN FILM SILICON

摘要

A method for manufacturing ultra-thin film silicon according to an embodiment of the present invention comprises the steps of preparing a silicon layer on top of a silicon oxide film; forming a thermal oxide film in the upper region of the silicon layer by performing thermal oxidation on the surface of the silicon layer and forming a first silicon layer thinner than the silicon layer in the lower region of the silicon layer; exposing the surface of the first silicon layer by removing the thermal oxide film; forming an ozone oxide film in the first silicon layer adjacent to the surface of the first silicon layer by performing ozone surface oxidation on the surface of the first silicon layer and forming a second silicon layer thinner than the silicon layer between the ozone oxide film and the silicon oxide film; exposing the surface of the second silicon layer by removing the ozone oxide film; and separating the second silicon layer from the silicon oxide film by etching the silicon oxide film.