| 摘要 |
The present invention enables uniform crystallization of a semiconductor film by means of laser annealing. The present invention comprises a pulse laser oscillating device for outputting a pulse laser beam, and an optical transmission means for transmitting the pulse laser beam outputted from the pulse laser oscillating device to irradiate onto the semiconductor film. Since the pulse laser beam, which has an effective power density on the irradiated surface of the semiconductor film calculated by the formula of effective power density (J / (sec·cm3)) = pulse energy density (J/cm2) / pulse width (sec) × absorption coefficient of semiconductor film (cm-1), is irradiated onto the semiconductor film so as to be in a range of 3 × 1012 to 1.5 × 1012, the semiconductor film can be crystallized without inducing abnormal grain growth due to complete melting, and uniform crystals with little variation are obtained. |
