| 摘要 |
<p>[OBJECTIVE] Provided is a semiconductor device using an oxide semiconductor suitable for a power device. In other words, provided is a semiconductor device through which a heavy current can flow and that has a high reliability. [SOLUTION] The semiconductor device comprises an oxide-stacked layer where a first oxide layer, a second oxide semiconductor layer, a second oxide semiconductor layer, and a second oxide layer are formed. An electrode, functioning as a source electrode, overlaps with a region with an element that provides conductivity to the first oxide semiconductor layer. Also, an electrode functioning as a drain electrode does not overlap with the region.</p> |
