| 发明名称 | Light emitting diode device and producing method thereof | ||
| 摘要 | A method for producing a light emitting diode device includes the steps of preparing a base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board, and the electrode portion to be electrically connected to a terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component at the other side of the base board so as to cover the light semiconductor layer and the electrode portion; removing the other side portion of the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the other surface of the light semiconductor layer. | ||
| 申请公布号 | US8809900(B2) | 申请公布日期 | 2014.08.19 |
| 申请号 | US201213429681 | 申请日期 | 2012.03.26 |
| 申请人 | Nitto Denko Corporation | 发明人 | Sato Satoshi;Ito Hisataka;Ooyabu Yasunari;Shinbori Yuki |
| 分类号 | H01L33/00;H01L21/00;H01L33/46;H01L33/60;H01L33/40 | 主分类号 | H01L33/00 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A method for producing a light emitting diode device, provided with a base board including a terminal and a light emitting diode element flip mounted on the base board, comprising preparing the base board; allowing a light semiconductor layer where an electrode portion is provided at one side in a thickness direction to be disposed in opposed relation to the base board in the thickness direction, and the electrode portion to be electrically connected to the terminal, so that the light semiconductor layer is flip-chip mounted on the base board; forming an encapsulating resin layer containing a light reflecting component on a side of the base board having the light semiconductor layer and an electrode portion so as to embed the light semiconductor layer and the electrode portion; removing the encapsulating resin layer so as to expose the light semiconductor layer; and forming a phosphor layer formed in a sheet state so as to be in contact with the exposed surface of the light semiconductor layer to form the light emitting diode element including the phosphor layer, the light semiconductor layer, and the electrode portion. | ||
| 地址 | Osaka JP | ||