发明名称 SEMICONDUCTOR LIGHT EMITTING DEVICE
摘要 <p>Provided is a semiconductor light emitting device capable of reducing a size or increasing light efficiency. The light emitting device according to the present invention comprises a substrate; a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on the substrate, composed of a first region in which only the first conductivity type semiconductor layer remains by removing a portion of the second conductivity type semiconductor layer and the active layer and a second region in which the active region is disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, and having a light emission surface on either the first conductivity type semiconductor layer or the second conductivity type semiconductor layer; a fluorescent substance covering at least a portion of the second region on the light emission surface side of the light emitting structure; and a first electrode and a second electrode electrically connected to the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, respectively, wherein the second electrode is formed on the first region on the light emission surface side of the light emitting structure.</p>
申请公布号 KR20140100115(A) 申请公布日期 2014.08.14
申请号 KR20130012944 申请日期 2013.02.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SUNG JOON;RYU, YOUNG HO;PARK, TAE YOUNG;JANG, TAE SUNG
分类号 H01L33/36;H01L33/38 主分类号 H01L33/36
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