发明名称 PHASE SHIFT BLANKMASK AND METHOD FOR FABRICATING THE SAME
摘要 <p>The present invention relates to a phase shift blank mask obtained by forming a phase shift layer in a continuous layer or a multilayer containing a metal and at least one of silicon (Si), oxygen (O) and nitrogen (N), and forming an uppermost phase shift layer in an oxidative phase shift layer. Thus, a phase shift blank mask including a phase shift layer having improved chemical resistance and durability in a washing solution during performing a washing process using the washing solution containing ozone (O_3), Hot-DI, and chemicals such as ammonia (NH_4OH), sulfuric acid (H_2SO_4), etc., may be provided.</p>
申请公布号 KR20140095955(A) 申请公布日期 2014.08.04
申请号 KR20130118272 申请日期 2013.10.04
申请人 S&STECH CO., LTD. 发明人 NAM, KEE SOO;KANG, GEUNG WON;KIM, DONG GEUN;JANG, JONG WON;CHOI, MIN KI
分类号 G03F1/26;G03F1/68;H01L21/027 主分类号 G03F1/26
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