| 摘要 |
The present invention relates to a light emitting device and, especially, to a nitride semiconductor light emitting device which can be manufactured using a silicon substrate. The present invention comprises a substrate including a silicon semiconductor; a buffer layer located on the substrate; a first semiconductor layer located on the buffer layer and including a nitride semiconductor of first conductivity having a first doping concentration; a second semiconductor layer which is located on the first semiconductor layer and includes a nitride semiconductor of the first conductivity having second doping concentration; a third semiconductor layer which is located between the first and second semiconductor layers and includes a nitride semiconductor having a doping concentration which is changed between the first and second doping concentrations; an active layer located on the third semiconductor layer; a fourth semiconductor layer of second conductivity located on the active layer; a first electrode which is electrically connected to the first or second semiconductor layer; and a second electrode which is electrically connected to the fourth semiconductor layer. |
