| 摘要 |
The purpose of the present invention is to provide a process for manufacturing a gas-barrier film which exhibits excellent storage stability. This process for manufacturing a gas-barrier film is characterized by comprising: (a) forming, on a substrate, an unmodified layer (A) which contains a silicon compound having a structure represented by general formula (1) -[Si(R1)(R2)-N(R3)]n-; (b) forming a layer (B) which contains a compound having an oxygen element or a nitrogen element on the unmodified layer (A); and (c) irradiating the obtained laminate with vacuum-ultraviolet light from the layer (B) side to modify the unmodified layer (A). |
