| 摘要 |
This method for fabricating a composite substrate comprises: (a) a step of mirror polishing the piezoelectric substrate side of an adhered substrate with a diameter of four or more inches, which is formed by bonding a piezoelectric substrate with a support substrate, until the thickness of the piezoelectric substrate is 3µm or less; (b) a step of creating thickness distribution data of the mirror polished piezoelectric substrate; and (c) a step of, by carrying out work with an ion beam working machine on the basis of the thickness distribution data, obtaining a composite substrate which has the thickness of the piezoelectric substrate of 3µm or less, the difference between the thickness maxima and minima of 60nm or less throughout the entire face, and a crystallization with a half-value width of a rocking curve which is obtained by x-ray diffraction being 100 arcsec or less. |
