发明名称 |
NONPLANAR III-N TRANSISTORS WITH COMPOSITIONALLY GRADED SEMICONDUCTOR CHANNELS |
摘要 |
A III-N semiconductor channel is compositionally graded between a transition layer and a III-N polarization layer. In embodiments, a gate stack is deposited over sidewalls of a fin including the graded III-N semiconductor channel allowing for formation of a transport channel in the III-N semiconductor channel adjacent to at least both sidewall surfaces in response to a gate bias voltage. In embodiments, a gate stack is deposited completely around a nanowire including a III-N semiconductor channel compositionally graded to enable formation of a transport channel in the III-N semiconductor channel adjacent to both the polarization layer and the transition layer in response to a gate bias voltage. |
申请公布号 |
US2014175515(A1) |
申请公布日期 |
2014.06.26 |
申请号 |
US201213725546 |
申请日期 |
2012.12.21 |
申请人 |
THEN Han Wui;DASGUPTA Sansaptak;RADOSAVLJEVIC Marko;CHU-KUNG Benjamin;SUNG Seung Hoon;GARDNER Sanaz K.;CHAU Robert S. |
发明人 |
THEN Han Wui;DASGUPTA Sansaptak;RADOSAVLJEVIC Marko;CHU-KUNG Benjamin;SUNG Seung Hoon;GARDNER Sanaz K.;CHAU Robert S. |
分类号 |
H01L29/772;H01L29/66 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
1. A non-planar III-N transistor disposed on a substrate, the transistor comprising:
two wide band gap material layers on opposite {0001} surfaces of a III-N semiconductor channel that has a compositional grading along the c-axis between the two wide band gap III-N layers; a gate stack comprising a gate dielectric and gate electrode, the gate stack disposed over opposing surfaces of the semiconductor channel that span a distance between the two wide band gap material layers; and a pair of source/drain regions embedded in or coupled to the non-planar III-N semiconductor body at opposite sides of the gate stack. |
地址 |
Portland OR US |