DEVICES FOR MONOLITHIC DATA CONVERSION INTERFACE PROTECTION AND METHODS OF FORMING THE SAME

摘要

Apparatus and methods for monolithic data conversion interface protection are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power high supply node, a second SCR and a second diode for providing protection between the signal node and a power low supply node, and a third SCR and a third diode for providing protection between the power high supply node and the power low supply node. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. Configuring the protection device in this manner enables in-suit input/output interface protection using a single cell. The protection device is suitable for monolithic data conversion interface protection in sub 3V operation.

主权项

1. An apparatus comprising:
a substrate; a first semiconductor region of a first doping type in the substrate; a second semiconductor region of a second doping type in the substrate; a third semiconductor region of the first doping type in the substrate, wherein the second semiconductor region is positioned between the first and third semiconductor regions; a fourth semiconductor region of the second doping type in the substrate, wherein the third semiconductor region is positioned between the second and fourth semiconductor regions; a first diffusion region of the second type in the first semiconductor region; a first gate region adjacent the first semiconductor region; a second diffusion region of the first type in the second semiconductor region; a third diffusion region of the first type in the second semiconductor region; a fourth diffusion region of the second type in the third semiconductor region; a fifth diffusion region of the first type in the fourth semiconductor region; and a second gate region adjacent the fourth semiconductor region, wherein the second diffusion region, the second semiconductor region, the first semiconductor region, and the first diffusion region are configured to operate as a first silicon controlled rectifier (SCR), wherein the third diffusion region, the second semiconductor region, the third semiconductor region, and the fourth diffusion region are configured to operate as a second SCR, and wherein the fifth diffusion region, the fourth semiconductor region, the third semiconductor region and the fourth diffusion region are configured to operate as a third SCR.