SEMICONDUCTOR DEVICE DIELECTRIC INTERFACE LAYER

摘要

Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.

主权项

1. A method of forming a film stack on a substrate, the method comprising:
under vacuum conditions, exposing the substrate to a plasma activated oxygen species; converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material; and forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.