| 发明名称 |
Photosensor and photosensor array with capacitive element |
| 摘要 |
A photosensor includes a lower electrode formed of a metal film, an amorphous silicon film disposed on the lower electrode, an n-type amorphous silicon film disposed on the amorphous silicon film, an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage, a capacitive element connected between the lower electrode and a second reference voltage, a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state, and a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on. |
| 申请公布号 |
US8748792(B2) |
申请公布日期 |
2014.06.10 |
| 申请号 |
US201113241934 |
申请日期 |
2011.09.23 |
| 申请人 |
Japan Display Inc.;Panasonic Liquid Crystal Display Co., Ltd. |
发明人 |
Miyazawa Toshio;Hasegawa Atsushi;Saitou Terunori;Yasuda Kozo;Yonekura Takeshi |
| 分类号 |
H01L27/00 |
主分类号 |
H01L27/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A photosensor, comprising:
a lower electrode formed of a metal film; an amorphous silicon film disposed on the lower electrode; an n-type amorphous silicon film disposed on the amorphous silicon film; an upper electrode that is disposed on the n-type amorphous silicon film, and receives a first reference voltage; a switch circuit that inputs a first supply voltage to the lower electrode in an on-state, and puts the lower electrode into a floating state in an off-state; a detector circuit that detects a voltage change in the lower electrode after irradiating the amorphous silicon film for a given period with light when the switch circuit is on; and a capacitive element connected between the lower electrode and a second reference voltage.
|
| 地址 |
Tokyo JP |
