| 摘要 |
PROBLEM TO BE SOLVED: To attain both ensuring switching speed by a power transistor and reducing noise.SOLUTION: A semiconductor device 100 includes a power transistor 110 and a gate pad 150 exposed to the outside. A first resistor R1 is connected between the gate pad 150 and a gate electrode of the power transistor 110, and a second resistor R2 is connected between the gate pad 150 and a source electrode (a first electrode) of the power transistor 110. A first capacitance is connected, in parallel to the second resistor R2, between one end of the first resistor R1 connected to the gate electrode and the source electrode (the first electrode) of the power transistor 110. |
