发明名称 |
Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diode |
摘要 |
A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns. |
申请公布号 |
US8742442(B2) |
申请公布日期 |
2014.06.03 |
申请号 |
US201213450424 |
申请日期 |
2012.04.18 |
申请人 |
Sino-American Silicon Products Inc. |
发明人 |
Wei Cheng-Hung;Lin Bo-Wen;Peng Ching-Yen;Kuo Hao-Chung;Hsu Wen-Ching |
分类号 |
H01L33/20 |
主分类号 |
H01L33/20 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting diode, comprising:
an epitaxial substrate including a top surface and a plurality of substrate patterns on said top surface, each of said substrate patterns having a surrounding wall protruding from said top surface, a cavity defined by said surrounding wall, and at least one protrusion disposed in said cavity; and a light-emitting unit that is disposed on said substrate patterns of said top surface and that is capable of emitting light; wherein said light-emitting unit includes a semiconductor layer disposed on said substrate patterns, at least one gap being formed between said semiconductor layer and one of said substrate patterns.
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地址 |
Hsinchu TW |