发明名称 Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diode
摘要 A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
申请公布号 US8742442(B2) 申请公布日期 2014.06.03
申请号 US201213450424 申请日期 2012.04.18
申请人 Sino-American Silicon Products Inc. 发明人 Wei Cheng-Hung;Lin Bo-Wen;Peng Ching-Yen;Kuo Hao-Chung;Hsu Wen-Ching
分类号 H01L33/20 主分类号 H01L33/20
代理机构 代理人
主权项 1. A light emitting diode, comprising: an epitaxial substrate including a top surface and a plurality of substrate patterns on said top surface, each of said substrate patterns having a surrounding wall protruding from said top surface, a cavity defined by said surrounding wall, and at least one protrusion disposed in said cavity; and a light-emitting unit that is disposed on said substrate patterns of said top surface and that is capable of emitting light; wherein said light-emitting unit includes a semiconductor layer disposed on said substrate patterns, at least one gap being formed between said semiconductor layer and one of said substrate patterns.
地址 Hsinchu TW