| 摘要 |
The present invention relates to a maskless lithographic apparatus and, specifically, to a maskless lithographic apparatus capable of detecting crosstalk and a method for inspecting crosstalk using the same. The present invention rapidly measures location of exposure beam which reflects errors of location and angle of a micro mirror while exposing photoresist on a substrate in a pattern form without a mask by including a beam location measuring unit in one side of the maskless lithographic apparatus in order to frequently detect location and size of exposure beam irradiated on the substrate before and after light exposure or after setting the maskless lithographic apparatus. Through the above, crosstalk defect of exposure beam of the maskless lithography can be prevented and a pattern deliberately accorded with a designed circuit pattern can be formed. |
