发明名称 |
GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE WITH CURRENT EXPANDING STRUCTURE |
摘要 |
A gallium nitride-based light-emitting diode with a current expanding structure. An LED structure comprises a substrate (100), a light-emitting epitaxial layer (101) located on the substrate, and a current expanding structure located on the light-emitting epitaxial layer, wherein the current expanding structure comprises a transparent electrode expanding strip (103) and a metal electrode expanding strip (104) attached to the side wall of the transparent electrode expanding strip (103). By means of the current expanding structure, not only the current expanding effect can be improved, electrode shading reduced, and the light-emitting efficiency improved, but also a high voltage (Vf) can be avoided. |
申请公布号 |
WO2014059862(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
WO2013CN84259 |
申请日期 |
2013.09.26 |
申请人 |
XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD. |
发明人 |
YIN, LINGFENG;LIN, SUHUI;ZHENG, JIANSEN;LIU, CHUANGUI;OU, YIDE;CHEN, GONG |
分类号 |
H01L33/36;H01L33/38;H01L33/40;H01L33/42 |
主分类号 |
H01L33/36 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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