发明名称 |
SUB-LITHOGRAPHIC SEMICONDUCTOR STRUCTURES WITH NON-CONSTANT PITCH |
摘要 |
Fin structures and methods of manufacturing fin structures using a dual-material sidewall image transfer mask to enable patterning of sub-lithographic features is disclosed. The method of forming a plurality of fins includes forming a first set of fins having a first pitch. The method further includes forming an adjacent fin to the first set of fins. The adjacent fin and a nearest fin of the first set of fins have a second pitch larger than the first pitch. The first set of fins and the adjacent fin are sub-lithographic features formed using a sidewall image transfer process. |
申请公布号 |
US2014110817(A1) |
申请公布日期 |
2014.04.24 |
申请号 |
US201213659318 |
申请日期 |
2012.10.24 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BERGENDAHL MARC A.;HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM;YANG CHIH-CHAO |
分类号 |
H01L29/02;H01L21/302 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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