| 摘要 |
PROBLEM TO BE SOLVED: To provide an ultrathin semiconductor IC built-in substrate.SOLUTION: A semiconductor IC built-in substrate manufacturing method comprises: preparing a pregreg 111a which has a core material impregnated with uncured resin and a through hole 112a provided to pierce the core material and the resin so as to be surrounded by the core material and the resin in plan view; and subsequently housing a semiconductor IC120 in the through hole 112a and performing thermal press on the pregreg 111a in this condition to cause a part of the resin to flow into the through hole 112a, and thereby to embed the semiconductor IC120 housed in the through hole 112a, by the inflowing resin. In the present embodiment, since the semiconductor IC120 is embedded by the inflowing resin with no core material above and under the semiconductor IC120, an ultrathin structure without core parts above and under the semiconductor IC120 can be achieved. |
