| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus of manufacturing a reflective type mask, which can suppress generation of residue even when a capping layer contains ruthenium.SOLUTION: A method of manufacturing a reflective type mask having a reflective layer provided on a substrate, a capping layer which is provided on the reflective layer and contains ruthenium, an absorbing layer provided on the capping layer, and a pattern region provided on the absorbing layer, comprises a step of forming a light shielding region surrounding the pattern region on the absorbing layer, the capping layer and the reflective layer. In the step of forming the light shielding region, the capping layer is physically dry-etched by using inert gas, and the reflective layer is chemically dry-etched by using a mixed gas of chlorine and oxygen. |
