| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device that allows ensuring the necessary wiring length and obtaining a desired resistance value without increasing the chip area, and to provide a method of manufacturing the same.SOLUTION: A semiconductor memory device includes a base film, a laminated body, a channel body, a memory film, and a conductor. The laminated body has a plurality of conductive layers and a plurality of insulating layers that are alternately stacked on the base film. The channel body is provided in a pair of first holes penetrating through the laminated body on a memory region and connected to a first groove and in the first groove. The memory film includes a charge storage film and is provided between side walls of the first holes and the channel body and between inner walls of the first groove and the channel body. The conductor penetrates through the laminated body on a peripheral region to be connected to a second groove, and is provided in a pair of second holes having a larger aperture than the first holes and in the second groove. |
