| 摘要 |
<p>According to the present invention, a semiconductor device includes a trench defined by etching a semiconductor substrate including a device isolation layer and an active region, a hammer-shaped active region protruding from the side and the bottom of the trench, and a gate electrode surrounding the hammer-shaped active region and buried on the bottom of the trench. Therefore, a gate driving current and a driving current can be increased.</p> |
