PROCEDE DE FABRICATION D'UNE CELLULE MEMOIRE NON VOLATILE A DOUBLE GRILLE

摘要

The method involves depositing a polycrystalline silicon layer so as to cover a stack of layers, and etching the layer to form a pattern (144) that is juxtaposed to a relief (132) in a semiconductor material of a gate (130) of a control transistor. A control gate (140) of a memory transistor is formed by forming another polycrystalline silicon layer on the pattern and by etching the latter layer so as to form another pattern (146) on the former pattern. The latter pattern is provided with a flat upper face to allow a resumption of a contact on the control gate of the memory transistor. An independent claim is also included for a double-gate non-volatile memory cell.