发明名称 |
Semiconductor device comprising string structures formed on active region |
摘要 |
A semiconductor device having a string gate structure and a method of manufacturing the same suppress leakage current. The semiconductor device includes a selection gate and a memory gate. The channel region of the selection gate has a higher impurity concentration than that of the memory gate. Impurities may be implanted at different angles to form the channel regions having different impurity concentrations. |
申请公布号 |
US8653578(B2) |
申请公布日期 |
2014.02.18 |
申请号 |
US20090555830 |
申请日期 |
2009.09.09 |
申请人 |
LEE CHANGHYUN;CHOI JUNGAL;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE CHANGHYUN;CHOI JUNGAL |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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