METHODS OF MANUFACTURING VERTICAL SILICON NANO TUBES USING SIDEWALL SPACER TECHNIQUE AND METAL-ASSISTED CHEMICAL ETCHING PROCESS AND VERTICAL SILICON NANO TUBES MANUFACTURED BY THE SAME

摘要

Provided is a manufacturing method for a vertical nanotube comprising a step of patterning a round hole on a base plate; a step of forming a spacer on the sidewall of the patterned hole; a step of metalizing catalytic metal on the base plate and on the hole; a step of removing the spacer from the sidewall of the hole; and a step of manufacturing a vertical nanotube by applying an etchant to the base plate and etching the base plate but the area on which the spacer is formed. [Reference numerals] (AA) Step of patterning a round hole on a base plate; (BB) Step of forming a spacer on the sidewall of the patterned hole; (CC) Step of metalizing catalytic metal on the base plate and on the hole; (DD) Step of removing the spacer from the sidewall of the hole; (EE) Step of manufacturing a vertical nanotube by etching the base plate but the area on which the spacer is formed