| 摘要 |
A semiconductor process sensor includes a constant reference voltage source 104, a process sensing resistor 116 having a resistance that depends on a parameter of the semiconductor process by which it was formed, a constant current source 103 and an analogue-to-digital converter coupled to a second terminal of the process sensing resistor to provide an output signal characterizing the semiconductor process. A voltage divider may be provided to produce several voltage reference levels from the constant voltage source. Comparison of the voltage across the process sensing resistor with these voltage levels may characterize the semiconductor process as normal, fast or slow. The process sensing resistor is of the same height as the resistors in the voltage divider but of smaller width such that it is more sensitive to process variations. Also disclosed is a PVT sensor that can be used to modify e.g. the bias in an integrated circuit to adjust for variations in supply voltage or temperature. |
