| 摘要 |
PROBLEM TO BE SOLVED: To prevent an incident light to a light receiving part from being intercepted by the multilayer structure of a CCD transfer register. SOLUTION: A photosensor 113 and a vertical transfer register 112 are provided on a silicon substrate 116, a silicon film 122 becoming a light transmission layer is provided in the upper layer region of the photosensor 113 not through an insulation film, and a silicon oxide film 123 becoming a light receiving insulation film is provided on the upper surface thereof. A transfer electrode 118 is provided in the upper layer region of the vertical transfer register 112, and a light shield film 120 is provided as an upper layer thereof. Since the light receiving surface of the photosensor 113 is made to be flush with or higher than the surface of the transfer electrode 118 by the silicon film 122, incident light from oblique direction can be taken into the light receiving part effectively.
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