| 摘要 |
PROBLEM TO BE SOLVED: To control a ZQ calibration additionally in an initial operation of a semiconductor memory device. SOLUTION: There is provided a ZQ calibration control circuit for a semiconductor memory device which includes a first signal generator, a second signal generator and a control unit. The first signal generator generates a pre-calibration signal during an initialization of the semiconductor memory device. The second signal generator generates ZQ calibration signals in response to a ZQ calibration command. The control unit controls a ZQ calibration in response to the pre-calibration signal and the ZQ calibration signals. COPYRIGHT: (C)2008,JPO&INPIT
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