METHOD FOR PROCESSING SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SUBSTRATE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for processing a substrate capable of forming a source/drain region having desired dopant concentration while securing a deposition speed, a method for manufacturing a semiconductor device, and a substrate processing device.SOLUTION: A method for processing a substrate including an insulating film in at least a part of a surface, a source part, a drain part, a gate part, and a structure which uses monocrystal silicon in a gate channel disposed below the gate part comprises the steps of: growing amorphous doped silicon and monocrystal silicon by supplying at least a silicon-containing gas and a doping gas; and single-crystallizing the amorphous doped silicon using the monocrystal silicon as a seed by heating the amorphous doped silicon and the monocrystal silicon.