| 摘要 |
The present invention discloses a memory device having a crossbar array structure and a method for manufacturing the same. The present invention is configured to include diodes which are disposed on the inside of a plurality of resistance variable memory cells. A leakage of electric current is remarkably diminished by setting the diodes, which are disposed in the memory cells sharing an electrode, such that the forward directions of the diodes of the memory cells are alternately opposite to each other, in which the forward direction of the diode of each memory cell is opposite to the forward direction of the diode of an adjacent memory cell sharing the electrode, and identical to the forward direction of the diode of the adjacent memory cell which is arranged in the diagonal direction without sharing the electrode. Also, since the leakage of electric current is remarkably diminished, the read margin of the memory device having the crossbar array structure increases, so the number of memory cells per a unit area may be increased, thereby improving the degree of integration. |
