发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND CHEMICAL MECHANICAL POLISHING METHOD
摘要 According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value.
申请公布号 US2013331004(A1) 申请公布日期 2013.12.12
申请号 US201313915119 申请日期 2013.06.11
申请人 JSR CORPORATION;KABUSHIKI KAISHA TOSHIBA 发明人 MINAMIHABA GAKU;GAWASE AKIFUMI;EDA HAJIME;MATSUI YUKITERU;KAMO SATOSHI;NISHIGUCHI NAOKI;MAEKAWA AYAKO
分类号 B24B53/017;B24B37/04;B24B53/095 主分类号 B24B53/017
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