发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND CHEMICAL MECHANICAL POLISHING METHOD |
摘要 |
According to one embodiment, a semiconductor device manufacturing method comprises forming a film to be polished on a semiconductor substrate, and performing a CMP method on the film to be polished. The CMP method includes polishing the film to be polished by bringing a surface of the film to be polished into contact with a surface of a polishing pad having a negative Rsk value. |
申请公布号 |
US2013331004(A1) |
申请公布日期 |
2013.12.12 |
申请号 |
US201313915119 |
申请日期 |
2013.06.11 |
申请人 |
JSR CORPORATION;KABUSHIKI KAISHA TOSHIBA |
发明人 |
MINAMIHABA GAKU;GAWASE AKIFUMI;EDA HAJIME;MATSUI YUKITERU;KAMO SATOSHI;NISHIGUCHI NAOKI;MAEKAWA AYAKO |
分类号 |
B24B53/017;B24B37/04;B24B53/095 |
主分类号 |
B24B53/017 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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