METHOD OF DEPOSITION OF Al2O3/SiO2 STACKS, FROM ALUMINIUM AND SILICON PRECURSORS

摘要

A method of forming an Al2O3/SiO2 stack comprising injecting into the reaction chamber, through an ALD process, at least one silicon containing compound selected from the group consisting of: BDEAS Bis(diethylamino)silane SiH2(NEt2)2, BDMAS Bis(dimethylamino)silane SiH2(NMe2)2, BEMAS Bis(ethylmethylamino)silane SiH2(NEtMe)2, DIPAS (Di-isopropylamido)silane SiH3(NiPr2), DTBAS (Di tert-butylamido)silane SiH3(NtBu2); injecting into the reaction chamber an oxygen source selected in the list: oxygen, ozone, oxygen plasma, water, CO2 plasma, N2O plasma; and injecting on said silicon oxide film, through an ALD process, at least one aluminum containing compound selected in the list: Al(Me)3, Al(Et)3, Al(Me)2(OiPr), Al(Me)2(NMe)2 or Al(Me)2(NEt)2.