| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve withstand voltage.SOLUTION: A semiconductor device 1 comprises: a substrate 10; a gate insulation film 20; and a gate electrode 30. A recess 17 having a side wall surface 17A, opens on one main surface 10A when viewed at a cross section along a thickness direction, and is formed on the substrate 10, the substrate consisting of a compound semiconductor. The gate insulation film 20 is arranged in contact with the side wall surface 17A. The gate electrode 30 is arranged in contact with the gate insulation film 20. The substrate 10 has a first conductivity type source region 15 arranged so as to be exposed on the side wall surface 17A; and a second conductivity type body region 14 arranged on the opposite side to the main surface 10A when viewed from the source region 15, coming into contact with the source region 15, and being exposed on the side wall surface 17A. The shape of the recess 17 becomes a closed form when viewed from the above, and the side wall surface 17A has an outwardly-convex shape in all directions when viewed from any point in the recess 17. |
