NITRIDE-BASED SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a nitride-based semiconductor device in which contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode can be reduced.SOLUTION: A manufacturing method of a nitride-based semiconductor laser device comprises the steps of: etching a back surface (a nitrogen face) of an n-type GaN substrate 1 having a wurtzite structure by an RIE method; and forming an n-side electrode 8 on the etched back surface (the nitrogen face) of the n-type GaN substrate 1.