| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering method capable of restraining effectively a waved film thickness distribution or film quality distribution from being generated, when forming a film by sputtering onto a target.SOLUTION: Tunnel-like leakage magnetic fields M1, M2 are formed in upper parts of respective targets by magnet units 4-4respectively arranged on target lower parts, while directing upwards opposed face sides opposed to a substrate W for the respective targets 3-3, the respective magnet units are synchronized during sputtering, to be reciprocated relatively with respect to the targets at a prescribed stroke along an X-direction, and to reciprocate the substrate relatively with respect to the targets at a prescribed stroke along the X-direction. The respective magnet units and the substrate are moved along a direction opposed each other, to make equal a time from a start point of reciprocation motion up to arrival in a turning position. |
