发明名称 |
Three-dimensional semiconductor memory devices |
摘要 |
Provided are three-dimensional semiconductor devices. The device includes conductive patterns stacked on a substrate, and an active pattern penetrating the conductive patterns to be connected to the substrate. The active pattern includes a first doped region disposed adjacent to at least one of the conductive patterns, and a diffusion-resistant doped region overlapped with at least a portion of the first doped region. The diffusion-resistant doped region may be a region doped with carbon. |
申请公布号 |
US8598647(B2) |
申请公布日期 |
2013.12.03 |
申请号 |
US201113291519 |
申请日期 |
2011.11.08 |
申请人 |
KIM DONGWOO;NAKANISHI TOSHIRO;LIM SEUNGHYUN;KIM BIO;HWANG KIHYUN;AHN JAEYOUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DONGWOO;NAKANISHI TOSHIRO;LIM SEUNGHYUN;KIM BIO;HWANG KIHYUN;AHN JAEYOUNG |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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