发明名称 Power transistor partial current sensing for high precision applications
摘要 A power transistor module including a power transistor with a first common power node, and a split control node. A first clip is connected to a portion of a second power node so that current through a first control segment of the control node is directed through a first transistor portion and through the first clip. A second clip is connected to another portion of the second power node so that current through a second control segment is directed through a second transistor portion and through the second clip. A ratio of an area of the first transistor portion to a combined area of the first and second portions is 5 percent to 75 percent. A shunt is coupled in series to the first clip. The shunt may be directly electrically connected to the first portion of the power transistor.
申请公布号 US8581660(B1) 申请公布日期 2013.11.12
申请号 US201213454730 申请日期 2012.04.24
申请人 DENISON MARIE;UDOMPANYAVIT UBOL;LOPEZ OSVALDO JORGE;KHAYAT JOSEPH MAURICE;TEXAS INSTRUMENTS INCORPORATED 发明人 DENISON MARIE;UDOMPANYAVIT UBOL;LOPEZ OSVALDO JORGE;KHAYAT JOSEPH MAURICE
分类号 H01L25/00 主分类号 H01L25/00
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