发明名称 |
Power transistor partial current sensing for high precision applications |
摘要 |
A power transistor module including a power transistor with a first common power node, and a split control node. A first clip is connected to a portion of a second power node so that current through a first control segment of the control node is directed through a first transistor portion and through the first clip. A second clip is connected to another portion of the second power node so that current through a second control segment is directed through a second transistor portion and through the second clip. A ratio of an area of the first transistor portion to a combined area of the first and second portions is 5 percent to 75 percent. A shunt is coupled in series to the first clip. The shunt may be directly electrically connected to the first portion of the power transistor.
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申请公布号 |
US8581660(B1) |
申请公布日期 |
2013.11.12 |
申请号 |
US201213454730 |
申请日期 |
2012.04.24 |
申请人 |
DENISON MARIE;UDOMPANYAVIT UBOL;LOPEZ OSVALDO JORGE;KHAYAT JOSEPH MAURICE;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
DENISON MARIE;UDOMPANYAVIT UBOL;LOPEZ OSVALDO JORGE;KHAYAT JOSEPH MAURICE |
分类号 |
H01L25/00 |
主分类号 |
H01L25/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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