发明名称 Metal deposition using seed layers
摘要 Methods of forming a conductive metal layers on substrates are disclosed which employ a seed layer to enhance bonding, especially to smooth, low-roughness or hydrophobic substrates. In one aspect of the invention, the seed layer can be formed by applying nanoparticles onto a surface of the substrate; and the metallization is achieved by electroplating an electrically conducting metal onto the seed layer, whereby the nanoparticles serve as nucleation sites for metal deposition. In another approach, the seed layer can be formed by a self-assembling linker material, such as a sulfur-containing silane material.
申请公布号 US8580100(B2) 申请公布日期 2013.11.12
申请号 US20110932372 申请日期 2011.02.24
申请人 FENG HSIEN-PING;CHEN GANG;BO YU;REN ZHIFENG;CHEN SHUO;POUDEL BED;MASSACHUSETTS INSTITUTE OF TECHNOLOGY;THE TRUSTEES OF BOSTON COLLEGE;GMZ ENERGY, INC. 发明人 FENG HSIEN-PING;CHEN GANG;BO YU;REN ZHIFENG;CHEN SHUO;POUDEL BED
分类号 C25D5/02;C25D5/54 主分类号 C25D5/02
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