发明名称 |
Methodology For Implementing Enhanced Optical Lithography For Hole Patterning In Semiconductor Fabrication |
摘要 |
System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.
|
申请公布号 |
US2013286371(A1) |
申请公布日期 |
2013.10.31 |
申请号 |
US201313923968 |
申请日期 |
2013.06.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LIU GEORGE;CHEN KUEI SHUN;CHEN NORMAN;CHANG VENCENT;LIN CHIN-HSIANG |
分类号 |
G03F7/20 |
主分类号 |
G03F7/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|