发明名称 Methodology For Implementing Enhanced Optical Lithography For Hole Patterning In Semiconductor Fabrication
摘要 System and method for enhancing optical lithography methodology for hole patterning in semiconductor fabrication are described. In one embodiment, a photolithography system comprises an illumination system for conditioning light from a light source, the illumination system producing a three-pore illumination pattern; a reticle comprising at least a portion of a pattern to be imaged onto a substrate, wherein the three-pore illumination pattern produced by the illumination system is projected through the reticle; and a projection lens disposed between the reticle and the substrate.
申请公布号 US2013286371(A1) 申请公布日期 2013.10.31
申请号 US201313923968 申请日期 2013.06.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 LIU GEORGE;CHEN KUEI SHUN;CHEN NORMAN;CHANG VENCENT;LIN CHIN-HSIANG
分类号 G03F7/20 主分类号 G03F7/20
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