| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of new structure.SOLUTION: A semiconductor device comprises: first wiring; second wiring; third wiring; fourth wiring; a first transistor comprising a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor comprising a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate that contains semiconductor material. The second transistor contains an oxide semiconductor layer. |
