发明名称 |
NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY SYSTEM, AND PROGRAM METHOD OF THE SAME |
摘要 |
Disclosed is a method for programming a nonvolatile memory device, which includes memory cells arranged in a plurality of rows. The programming method includes alternately selecting word lines to program data at a first page portion and a second page portion associated with the memory cells. After the first and second page portions are programmed, the method includes programming data at a third page portion associated with the memory cells according to an order in which word lines are arranged. The word lines may be sequentially selected one by one from a word line adjacent to a ground selection line.
|
申请公布号 |
US2013250677(A1) |
申请公布日期 |
2013.09.26 |
申请号 |
US201213661021 |
申请日期 |
2012.10.25 |
申请人 |
NAM SANG-WAN;PARK JUNGHOON |
发明人 |
NAM SANG-WAN;PARK JUNGHOON |
分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|