| 摘要 |
PROBLEM TO BE SOLVED: To provide a direct laminated semiconductor device and a manufacturing method of the same, which do not require electrode formation from a rear face side and do not increase the number of electrode formation processes.SOLUTION: A laminated semiconductor device in which a plurality of semiconductor elements 91 including impurity diffusion layers 33, 34 and an insulation layer 61 sequentially formed on an embedded oxide film 21 are laminated, comprises: through electrodes 72, 73 which pierces the insulation layer, the impurity diffusion layers and the embedded oxide film. |
