SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: An LSI semiconductor memory device and a manufacturing method thereof are provided to stably manufacture the LSI semiconductor memory device by using a transistor with a horizontal channel structure as a switching device. CONSTITUTION: An active area is formed on the upper surface of a semiconductor substrate (10) with a floating type. The active area includes a plurality of unit active areas. A pair of word lines cross the unit active areas. A dummy word line is orthogonal to the active area. A source area is formed on the unit active area between the word lines. A drain area is located on the unit active area between the word line and the dummy word line.