发明名称 |
Semiconductor Device and Method of Forming Non-Linear Interconnect Layer with Extended Length for Joint Reliability |
摘要 |
A semiconductor device has a substrate and first conductive layer formed over the substrate. An insulating layer is formed over the first substrate with an opening over the first conductive layer. A second conductive layer is formed within the opening of the insulating layer. A portion of the second conductive layer is removed to expose a horizontal surface and side surfaces of the second conductive layer below a surface of the insulating layer. The second conductive layer has non-linear surfaces to extend a contact area of the second conductive layer. The horizontal surface and side surfaces can be stepped surfaces or formed as a ring. A third conductive layer is formed over the second conductive layer. A plurality of bumps is formed over the horizontal surface and side surfaces of the second conductive layer. A semiconductor die is mounted to the substrate.
|
申请公布号 |
US2013234318(A1) |
申请公布日期 |
2013.09.12 |
申请号 |
US201213417034 |
申请日期 |
2012.03.09 |
申请人 |
LEE JAEHYUN;JANG KIYOUN;LEE KYUNGHOON;LEE TAEWOO;STATS CHIPPAC, LTD. |
发明人 |
LEE JAEHYUN;JANG KIYOUN;LEE KYUNGHOON;LEE TAEWOO |
分类号 |
H01L23/498;H01L21/60 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|