发明名称 |
APPARATUS AND PROCESSES FOR SILICON ON INSULATOR MEMS PRESSURE SENSORS |
摘要 |
System and methods for silicon on insulator MEMS pressure sensors are provided. In one embodiment, a method comprises: applying a doping source to a silicon-on-insulator (SOI) silicon wafer having a sensor layer and an insulating layer comprising SiO2 material; doping the silicon wafer with Boron atoms from the doping source while controlling an injection energy of the doping to achieve a top-heavy ion penetration profile; and applying a heat source to diffuse the Boron atoms throughout the sensor layer of the SOI silicon wafer. |
申请公布号 |
CA2807671(A1) |
申请公布日期 |
2013.09.05 |
申请号 |
CA20132807671 |
申请日期 |
2013.02.26 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
BROWN, GEORGE C.;RAHN, CURTIS |
分类号 |
G01L9/06 |
主分类号 |
G01L9/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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