| 摘要 |
The circuit has a gate oxide layer (308) arranged on a channel of a semiconductor-transistor. A changeable gate-stack-layer is arranged between the gate oxide layer and a gate electrode (312). The gate-stack (310) has a resistive switching element whose conductivity is changed for changing an on-resistance of the semiconductor-transistor. The transistor stores information based on changing of the on-resistance of the transistor at a preset gate-voltage. The gate-stack-layer is made of a phase-change material e.g. chalcogenide glass. Independent claims are also included for the following: (1) a method for producing an integrated circuit (2) a system comprising a processor (3) a hard disk drive mechanism comprising a controller (4) a method for storing information (5) a method for producing a memory cell. |
