SEMICONDUCTOR STRUCTURES HAVING REDUCED CONTACT RESISTANCE

摘要

PROBLEM TO BE SOLVED: To form high-quality ohmic contacts on a group III-V semiconductor material and manufacture a semiconductor device with low power consumption and a long life.SOLUTION: A semiconductor device 500 comprises a first group III-V semiconductor layer 510, a group III-V semiconductor intermediate layer, and a metal layer 530 having a Fermi energy level. The Fermi energy level of the metal layer 530 is above the valence band energy levels of the first group III-V semiconductor layer 510 and the group III-V semiconductor intermediate layer. The energy level of the group III-V semiconductor intermediate layer is between the Fermi energy level of the metal layer 530 and the valence band energy level of the first group III-V semiconductor layer 510. The group III-V semiconductor intermediate layer includes a second group III-V semiconductor layer 520 and a third group III-V semiconductor layer 525.