| 摘要 |
This wide band gap semiconductor device addresses the issue of suppressing an increase of a leak current and an increase of on-resistance when a reverse voltage is applied to the device having an interface between a metal and a wide band gap semiconductor. This wide band gap semiconductor device includes: a first conductivity-type wide band gap semiconductor substrate having a high concentration; a first conductivity-type wide band gap semiconductor deposition film having a low concentration, said semiconductor deposition film being formed on the semiconductor substrate; a metal film, which is formed on the semiconductor deposition film, and which constitutes a Schottky interface region between the metal film and the semiconductor deposition film; and a second conductivity-type region, which is formed in a region that corresponds to the periphery of the metal film on the semiconductor deposition film. The Schottky interface region on the semiconductor deposition film is surrounded by the second conductivity-type region and constitutes a plurality of island regions at regular intervals. |
